THE GREATEST GUIDE TO N TYPE GE

≤ 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the structure is cycled through oxidizing and annealing levels. A result of the preferential oxidation of Si in excess of Ge [sixty eight], the first Si1–The final word action-packed science and technological know-how magazine